Abstract
Device-quality Hg1−xCdxTe (0.26<x<0.33) epilayers with thicknesses in the range 10–20 μm were grown on (111)B CdTe substrates by molecular beam epitaxy (MBE). The as-grown layers were p type, and typically had carrier concentrations in the low 1016 cm−3 range and hole mobilities greater than 220 cm2/V s at 77 K. The n+-p junction was formed by Be ion implantation; unpassivated mesa photodiodes were fabricated by standard photolithographic techniques. Resistance-area products (R0A) at zero bias were 5.2×106 and 1.4×104 Ω cm2 at 77 K for Hg1−xCdxTe with cutoff wavelengths of 4.0 and 5.7 μm, respectively. These R0A values approach typical ones obtained by liquid phase epitaxy and represent a very promising initial effort for MBE-grown Hg1−xCdxTe.
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