Abstract
The photoconductive property in silicon p?i?n diodes irradiated with 1?MeV neutrons has been investigated in the infrared band using current and capacitance measurements. This property is demonstrated to be affected by the presence of radiation-induced defect centres in the band gap. The measurements show that an increase in fluence leads to a marked decrease in photocurrent. It is argued that an increase in light intensity may increase the effective carrier density but the density of electron?hole pairs contributing to the total measured current is reduced by an increase in the number of radiation-induced generation?recombination centres.
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