Abstract
An experimental study has been performed for laser ablation of silicon at 1064 nm with variable pulse durations from 50 nanoseconds to 200 nanoseconds. A spatial multi-pulse enhancement effect has been revealed, which has been rarely reported in literature. The specific feature of this effect is that for multi-pulse laser ablation of silicon performed sequentially at a group of locations, the ablation efficiency and quality starting from the second location can be enhanced if the distance between adjacent locations is sufficiently small, and the ablation efficiency enhancement becomes more obvious as the distance decreases or the laser pulse duration increases. Further study is needed to understand the underlying physical mechanism. This effect, if well understood, can be utilized to significantly improve the quality and efficiency of infrared nanosecond laser silicon ablation. This will widen the practical applications of the low-cost and low-energy-consumption infrared nanosecond lasers and hence significantly decrease the manufacturing cost and energy consumption in many relevant areas.
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