Abstract
Abstract The example of ferroelectric films of barium strontium niobate (BSN) deposited on a silicon substrate with thin silicon nitride sublayer was used to show that the specific features of charge accumulation process in metal- ferroelectric- insulator- semiconductor (MFIS) structures depending on the parameters of insulator and ferroelectric layers manifest themselves in three mechanisms: i) injection writing, ii) polarization writing, and iii) polarization + injection mechanism, at which the polarization in ferroelectric enhanced the injection of carriers from semiconductor-insulator interface. The details of manifestation of each mechanism were analysed.
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