Abstract
Influences of temperature on graphene surface treatment using trimethylaluminium (TMA) and H2O were investigated for a growth of Al2O3 film by atomic layer deposition (ALD) on graphene. It has been reported that a nucleation of Al2O3 film on the graphene surface was enhanced significantly by a surface treatment using TMA and H2O at 100 °C prior to the deposition of Al2O3 film by ALD at the same temperature. Here, we investigate influences of the surface treatment temperature on the nucleation of Al2O3 film grown by ALD on graphene surface. It is revealed that the nucleation of Al2O3 film is degraded as the surface treatment temperature increases from 150 to 200°C. The origin of the deteriorated nucleation of Al2O3 film is attributed to a decreased density of C–O and OC–O defects on the graphene surface at the high temperature (200 °C).
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