Abstract
AbstractThe circuit design of MOS dynamic RAM has a great influence on its fsoft errors; effects of capacity of the dummy cell, the word line potential, sensitivity of the sense amplifier, and their mutual timing, on soft errors were observed in accelerated tests with radioisotopes. the ratio of the dummy cell capacity to the memory cell capacity determines critical charges for “1” and “0,” the smaller of which controls the soft error rate. the soft error rate was reduced to one‐tenth by rainsing the word line potential before operation of the sense amplifier is improved by preserving sufficient time for grounding of its flip‐flop terminal and that the soft error rate is proportional to the bit line floating time. the error is minimized by adjusting properly the operation time of the sense amplifier.
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