Abstract
In this study, we investigated the electrical, optical and structural properties of aluminum-doped ZnO (AZO) thin films by RF magnetron sputtering under different working pressure of 5 - 40 mTorr. Optimization of the prepared thin films shows low resistivity of 6.11 × 10-4 ?-cm, mobility of 4.295 cm2/V-s and carrier concentration of 3.277 × 1020 cm-3 at working pressure of 5 mTorr. The maximum transmittance of 98.99 % for wavelengths above 600 nm and Haacke figure of merit (FOM) are 6.44 × 10-3 ?-1 with working pressure of 5 mTorr. These results indicate that AZO thin films are a promising high conductivity transparent electrode scheme for solar cells and various displays applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
