Abstract
The effects of molar concentration on ZnSe and Zr-doped ZnSe thin films were studied after successful synthesis by electrochemical technique. 0.1 M zinc tetraoxosulphate (VI) heptahydrate (ZnSO4·7H2O) and 0.1 M selenium powder respectively served as the cationic and anionic precursors while 0.1 mol% of zirconium oxidchlorid (ZrOCl2·8H2O) was used as the dopant. The morphology, structure, elemental, light response, and electrical features of the samples were studied. The films exhibited uniform distribution of spherical balls with crystalline peaks at (220), (221), (300), and (310) planes. The elemental composition of the film confirmed the deposition of as-synthesized elements. Improved optical characteristics and reduced band gap energies of the films from 2.4 eV to 2.0 eV were gotten upon the addition of zirconium. Electrical results showed increased material conductivity at increasing dopant percentages. The synthesized materials are potentially applied in optoelectronics and photovoltaics.
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