Abstract
AbstractThe dependence of the phenomenological conductivity relaxation time τσ on the compressive uniaxial stress F applied in 〈111〉 direction is investigated in n‐type Ge. The measurements at 80 K are made for two groups of samples with free carrier concentrations of 5 × 1012 cm−3 and 2.4 × 1014 cm−3. At intermediate stresses (0 to 5 kbar) a nonmonotonous dependence of τσ on F is observed. It is shown that this effect is mainly caused by the influence of stress on the inertia of the electric field‐induced electron redistribution process. At stresses F > 5 kbar τσ asymptotically approaches a saturation value which increases with electron concentration. The qualitative analysis of these data leads to the conclusion that the coupling constants for the electron scattering by the electrons of the same and of the other valleys are of the same order.
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