Abstract
The effects of postdeposition annealing at up to 350 °C on the crystallinity and thermal stability of sputter-deposited ZnO films have been investigated in terms of the deposition pressure. The average crystallite size and biaxial film stress of an as-deposited ZnO film is strongly related to the deposition pressure. A crystallization process during postdeposition annealing was only observed when the film was deposited under low pressure. Thermal desorption spectrometry (TDS) measurement revealed that Zn desorption from the ZnO film was suppressed with decreasing deposition pressure. Zn desorption from the films was correlated with rf plasma analysis results. It was found that oxygen was desorbed only from the films deposited at low pressure with annealing temperatures above 250 °C. This desorption of oxygen was strongly related to the crystallization process during postdeposition annealing.
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