Abstract
The resistance change of an insulator or semiconductor under applied current or voltage is defined as resistive switching effect, which is a significative physical performance in the exploit of new concept nonvolatile resistance random access memory (RRAM). In our work, the g-C3N4 powder was firstly fabricated by calcination method, and continuously a device with Ag/g-C3N4/FTO structure was prepared using drop-coated g-C3N4 powder to form a film onto FTO. It can be observed that the as-prepared cell exhibits an excellent resistive switching memory characteristic (HRS/LRS resistance ratio can be reached to ~ 52) and good reliability under applied voltage window of 4.0 V. Finally, it is believed that the space charge limited conduction is appropriate to understanding such the memory behavior.
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