Abstract

We present the results of our work on electrotronic properties of undoped carbon-rich BN films at elevated temperatures, produced on Si substrates using Reactive Pulse Plasma (RPP) CVD process. Round, aluminum (Al) electrodes were evaporated on the top of deposited layers. Thus, metal-insulator-semiconductor (MIS) structures with BN thin films acting as the insulator were crated, which enabled subsequent electrical characterization (current-voltage (I-V) and capacitance-voltage (C-V) measurements) of studied material. The influence of elevated temperatures on electronic properties of obtained BN films was investigated, based on I-V and C-V curves measurements carried out within the temperature range 25-300OC. This allowed extraction of several electronic parameters (eri, VFB, ΔVH, Dit, Qeff) of BN/semiconductor system and discussion of the influence of the temperature on their values.

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