Abstract
Investigations of the microcrystalline structure of sputtered MoSi 2 thin films deposited at temperatures in the range 60–500 °C are described. At low temperatures the films are amorphous, and in the higher range of temperature hexagonal MoSi 2 is detected. Annealing the films at 960 °C to form the low resistivity tetragonal MoSi 2 phase results in different grain sizes depending on the substrate temperature during deposition.
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