Influence of the Precursor Solution Molarity on the Dielectric Response of Chemical Solution Deposited Strontium Titanate Thin Films on Si

Abstract

SrTiO3 films were deposited using metallo-organic solution deposition with different precursor solution molarities. The films were characterized via X-Ray diffraction and field emission scanning electron microscopy. The dielectric constant, loss tangent, tunability, and leakage current were measured as a function of electric field, frequency, and temperature. The film deposited with a lower precursor solution molarity solution had a larger permittivity and tunability, but it also had higher loss tangent and leakage current density. The internal stresses in the films are almost completely relaxed, and this is the main reason for the large, bulk-like dielectric constant in these films.