Abstract
The influence of the burning power, burning time and probe power on the holewidth, hole depth and hole decay time have been studied in time-resolved transient hole-burning (THB) experiments. The systems investigated are free-base porphin (H 2P) in crystalline n-octane ( n-C 8), zinc-porphin (ZnP) in n-C 8, and ZnP in amorphous polyethylene (PE). The THB kinetics is interpreted in terms of saturation broadening due to a triplet state bottleneck. The holewidth and decay time of the hole are not influenced by the probe power, P p/ A, at least for P p/ A⩽10 μW/mm 2. The same hole-broadening kinetics has been found to apply for the crystalline and the amorphous hosts here studied.
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