Abstract
Fluorinated silicon-nitride films have been prepared from an Ar/SiF4/NH3 gas mixture by inductively coupled remote plasma-enhanced chemical vapor deposition (IC-RPECVD) at different substrate temperatures, ranging from 150 to 300°C. All of the resulting deposited silicon-nitride films were free of Si-H bonds, showed high dielectric breakdown fields (≥8 MV cm−1), and had root mean square (rms) surface roughness values below 3 A. The films’ refractive indices and the contents of O and F remain constant, but Si/N ratios drop from 5 to 2 and N-H bond concentrations decrease in the range (1.3–0.9) × 1022 cm−3 as the substrate temperature increases. The density of interface states (Dit) with c-Si was reduced from 2.4 × 1012 to 8 × 1011 eV−1 cm−2 at substrate temperatures ≥250°C.
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