Abstract
The crystallographic structure and morphology of Pb layers in their early stage of growth on Si(3 3 5) surface are studied with Reflection High Electron Energy Diffraction (RHEED) and specific resistivity techniques. The vicinal Si(3 3 5), with different surface morphology controlled by the amount of predeposited Au, was used as a substrate. Changes in the substrate morphology, from disordered step distribution through a perfectly ordered Si(3 3 5) to a hill-and-valley structure consisting of wide (1 1 1) terraces and high Miller index facets, cause switching between one- and two-dimensional growth of the Pb structures.
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