Influence of Stone-Wales defects on the structural and electronic properties of single-walled silicon nanotubes by SCC-DFTB calculations

Abstract

In this work, using the self-consistent charge density functional tight-binding (SCC-DFTB) approach, we explored the effects of Stone-Wales (SW) defects on the structure and electronic properties of perfect single-walled silicon nanotubes(SWSiNTs), including zigzag (n1,0) (8≤n1≤16), armchair (n2,n2) (5≤n2≤10), and chiral (2n3,n3) (3≤n3≤8). We found that the presence of SW defects leads to changes in bond length and bond angle, resulting in structural changes at the defect site. However, nanotubes still exhibit tubular and hexagonal structures. Also, the defect structure of zigzag and armchair SW-II defective tubes is symmetrical, which means that the bond length of the Si-Si bond is equivalent to that of its symmetric bond. Besides, after introducing the SW-II defect, zigzag and chiral tubes become more stable, but the stability of armchair tubes with small diameter is reduced. The introduction of SW-Ⅰ and SW-Ⅱ defects transforms armchair SiNTs from semiconductor into semi-metallic properties. Moreover, for a perfect structure, the charge moves from inside out along the radial direction of the tube and the amount of charge is distributed in an axisymmetric manner. After introducing SW defects, the range of charge transfer is expanded, SW-Ⅱ defective structures appear inward deviation, and the atoms near the defect change from regular arrangement to inward aggregation. This work may provide a new way to adjust the electronic properties of SWSiNTs and open up wider applications in nanoelectronic devices.