Abstract
This report focuses on the surface properties of sensitized polycrystalline lead selenide (PbSe) thin films that could significantly affect the final performance of photoconductive devices. By characterization the element chemical state and the current distribution along with the relevant morphologies at surface of sensitized and original PbSe films, it is confirmed that after sensitization surface properties, as well as the performance of photoconductive devices have been significantly modified. The mechanism was also discussed.
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