Abstract
Layered semiconductors (including GeS), which are widely used in modern electronics, are of great interest for researchers. New GeS-based devices have been developed for holographic recording, optical processing, and storage of information. In the last few years, American scientists have developed a unique GeS-based device that makes it possible to accumulate an immense amount of solar energy. The introduction of rare earth elements (REEs) facilitates the healing of metal and chalcogenide vacancies, removes polytypism, and enhances interlayer interaction.
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