Abstract
The effect of irradiation temperature on the crystallographic stability of the ternary carbides Ti3SiC2 and Ti3AlC2 was investigated in the 350 to 600 °C temperature range, using 2 MeV protons to a fluence of 2.25 × 1018 protons cm−2. Both materials shrink along the basal planes and expand normal to them. Defect recovery decreases the magnitude of these anisotropic lattice changes with increasing irradiation temperature. However, reduced recovery in Ti3AlC2 causes irradiated surface exfoliation at low temperatures and elevated damage rates. The extent of lattice change suggests that in-reactor use of these compositions will likely be limited to high-temperature applications.
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