Abstract
ABSTRACT Epitaxial SrTiO3 thin films have been deposited on Si (100) substrates by laser molecular-beam epitaxy. The experiments have confirmed that the use of Sr buffer layer is essential for making high quality SrTiO3 film. Apart from this, processing parameters including the deposition temperature and time for each layer also have significant influence on the crystallinity and roughness of SrTiO3. The thin films prepared under optimized conditions were found to have a pure perovskite phase, well crystallized and epitaxially aligned. The electrical measurements indicate that the SrTiO3 film has a capacitance effective thickness of less than 16 Å.
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