Abstract
The effect of annealing at 610–720 K under enhanced hydrostatic pressure (HP) on electrical properties of manganese implanted Czochralski grown silicon (CzSi:Mn) and floating zone grown silicon (FzSi:Mn) (doses up to 1×10 16 cm −1, E=160 keV) was investigated by electrical C– V, I– V and admittance measurements. Mn + implantation produces both donor-like and acceptor-like implantation-induced defects. The stress-induced decrease in the hole concentration was detected in CzSi implanted by Mn + and annealed at temperatures 610–670 K. The effect of changing initial conductivity of CzSi:Mn samples of high concentration of interstitial oxygen, from p type to n type, due to thermal donors (TDs) generation has been observed. The electron concentration after type conversion depends on annealing conditions and Mn + dose. The TDs generation has not been detected in FzSi:Mn samples containing lower oxygen concentration, however, the FzSi:Mn samples annealed at 720 K under 10 5 Pa for 10 h indicate at the implanted side the increased carrier concentration due to the defects produced by Mn + implantation. The heat treatment of FzSi:Mn under HP at 720 K for 10 h results in further increase of carrier concentration due to the defect generation.
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