Abstract
We investigated the electronic, phonon frequencies, and sound velocity of GaAs1-xNx ternary semiconductor alloys with the zinc-blende crystal structure over the entire nitrogen concentration range (with x from 0 to 1) using the empirical pseudo-potential model within the virtual crystal approximation including the compositional disorder effect. The pressure-dependent electronic, phonon frequencies and sound velocity of GaAs1-xNx ternary alloy have been studied. Our findings and the existing experimental data are found to be in good agreement. According to the dependence on pressure, a rising bandgap is predicted for GaAs1-xNx alloys at high-pressure values. According to the findings of this study, the GaAs1-xNx characteristics could have substantial optoelectronic applications in the infrared and mid-infrared spectral ranges.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
