Abstract
AlGaN metalorganic vapor-phase epitaxial growth simulation in a TMAl/TMGa/NH3/H2 system was studied to explain its growth rate and Al content. We proposed three kinds of Al- and Ga-containing polymers in this system. By using those polymers, we got good agreements in pressure, TMAl/(TMAl+TMGa) inlet ratio, and temperature dependences of AlGaN growth rate and its Al content between simulations and experiments, even at pressures higher than 40 kPa. Our results showed that the formation of these polymers is enhanced under higher pressures. The simulation considering those polymers could explain the linearity in the TMAl/(TMAl+TMGa) inlet ratio dependences of growth rate and Al content at lower pressure and their non-linearity at higher pressure.
Highlights
The bandgap of the AlXGa1-XN system covers from 3.42 eV to 6.04 eV [1, 2] as a function of Al content from zero to unity
That decline in AlGaN growth rate indicates that additional polymerizations among Al- and Ga-containing molecules occurs in the Metalorganic vapor-phase epitaxial (MOVPE) process using a trimethyl aluminum (TMAl)/trimethyl gallium (TMGa)/NH3/H2 system, and those polymers prevent the AlGaN growth
We tried to find out the reactive molecules forming Al- and Ga-containing polymers in AlGaN MOVPE using a TMAl/TMGa/NH3/H2 system by simulation
Summary
This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. Influence of polymerization among Al- and Ga-containing molecules on growth rate and Al content in AlGaN Kazuhiro Ohkawaa, Kenichi Nakamurab, Akira Hirakob, Daisuke Iidaa a Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia b Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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