Abstract
Although GaN-based materials have been successfully utilized in optoelectronic and electronic devices, some important physical issues have not been fully understood, for example, why they can have high luminous efficiency even with high density of point defects, and what are the origins of yellow luminescence (YL) in their photoluminescence (PL) spectra. In this paper, the influence of point defects on GaN-based materials are investigated by first principle calculation. It is revealed that vacancy defects in GaN-based materials only make the effective masses of electrons and holes increase, consequently they have no significant contribution on the non-radiative recombination. What is more, CO complex interstitial impurities or Ga interstitial impurities are most likely to lead to YL in PL spectra of GaN-based materials.
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