Abstract
Surface-substrate potentials and charge fluxes observed during a high-current Arsenic implant on a wafer half-covered with photoresist were quantified using a CHARM(R)-2 charging monitor wafer. High negative potentials were observed on the bare portion of the wafer, while high positive potentials were observed on the photoresist-covered portion of the wafer. Substantially enhanced positive charge-flux was observed near the resist edge, on the bare side of the wafer. A model is proposed to explain these phenomena.
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