Abstract
Summary form only given. Photon recycling associated with the reabsorption of trapped photons strongly affects the performance of light emitting diodes (LEDs). It significantly enhances the LED external quantum efficiency. We use a phenomenological model of the electron and photon transport to calculate characteristics of LEDs with nonuniform injection taking into account the effect of photon recycling. We consider double heterostructure LEDs with a narrow-gap p-doped active region clad between two wide-gap confining layers. The LED structure has a strip top contact injecting electrons and a wide bottom contact injecting holes. Due to the relatively small area of one of the contacts, the electron injection is pronouncedly nonuniform. The bottom of the LED is provided with a mirror.
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