Abstract
This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).
Highlights
In recent years, InGaN-based light-emitting diodes (LEDs) are widely used for applications in the backlight of flat-panel displays and solid-state lighting [1]
Based on the experimental results of Raman and excitation current-dependent EL measurement, it can be determined that the growths of the InGaN-based LED on the higher symmetry of hexagonal lattice arrangement PSS (HLAPSS) can acquire a better crystalline quality
The superiority of this structure emerges from the relieved residual compressive strain of GaN epitaxial layers, which is accompanied by the reduction of polarization fields within the multiple-quantum wells (MQWs) along with weaker quantum-confined Stark effect (QCSE)
Summary
InGaN-based light-emitting diodes (LEDs) are widely used for applications in the backlight of flat-panel displays and solid-state lighting [1]. Many significant methods have been proposed in the literatures for improving the EQE of InGaN-based LEDs, such as patterned sapphire substrates (PSSs) [2,3,4,5,6], epitaxial lateral overgrowth (ELOG) [7,8], surface structure [9,10,11], semi/non-polar quantum wells (QWs) [12,13,14,15], and so on Among these technologies, the PSS method has attracted considerable attention because of its ability to improve both IQE and LEE.
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