Abstract
The possibility of passivating the surface of photoluminescent porous silicon by thin SiO x films is studied. The influence of the passivating fi lm on the porous silicon photoluminescence spectra is investigated using luminescence, optical, and IR spectroscopy. It is shown that most of the IR absorption bands of porous silicon structures correspond to molecular complexes containing hydrogen and oxygen. It is demonstrated that the SiO x films are transparent for the exciting light and for the light generated by the porous silicon and can be used to minimize degradation processes and to protect the porous layer from the environment.
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