Abstract
Among the langasite family, Ca3TaAl3Si2O14 (CTAS) is particularly promising for high temperature sensor applications due to its relatively high resistivity. In this work, CTAS single crystals have been grown by the Czochralski technique under various oxygen partial pressures using Ir and Pt crucibles. Colorless CTAS crystals were grown for the first time; however, the elimination of related defects did not influence the electrical properties. Furthermore, dielectric and piezoelectric properties were independent of growth conditions. Instead, the electrical resistivity was found to be remarkably higher the lower the oxygen partial pressure, reaching a value of ∼7 × 1010 Ω cm at 400 °C, which is 3 orders of magnitude higher than that of disordered LTGA. Therefore, grown CTAS crystals are promising for high temperature piezoelectric sensor applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.