Abstract
The effect of α-sexithiophene ( α–6T) layers on the light emitting diode (LED) were studied. The α–6T was used for a buffer layer in electroluminescent (EL) devices. Enhanced carrier (hole) injection and improved emission efficiency were observed. Carrier injection characteristics were investigated as a function of α–6T layer thickness. The efficiency of the electroluminescence was proportional to the thickness of α—6T layer. The highest efficiency was observed at 600 Å of α–6T layer, which was about 1.5 times higher than that of device without α–6T layer. The device with α–6T layer showed an operating voltage lowered by 2 V. The α–6T layer can substitute hole blocking layer, and control charge injecting properties.
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