Abstract
The influence of octadecyltrichlorosilane (OTS) surface modification of a gate dielectric on the electrical properties of polymer thin-film transistors based on poly(3-hexylthiophene) is investigated by using capacitance-voltage analysis. Results show that surface modification using OTS can effectively increase the field-effect mobility in the saturation region by almost two orders of magnitude to 2 × 102 cm2/V · s and improve the stability of the devices under gate-bias stress. Capacitance-voltage (C-V) analysis for the metal-polymer-oxide-silicon structures indicates that the frequency-dependent behavior of the C-V characteristics is related to the long relaxation time of the charge carriers in the polymer bulk rather than the trapping effect at the dielectric/ polymer interface, and the performance improvement of the de vices is attributed to a reduction of localized charges in the poly mer bulk.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Device and Materials Reliability
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
