Abstract
The structural and transport properties of manganites with and 0.2 prepared by solid state reaction route are studied. These compounds are found to be crystallized in orthorhombic structural form. A shift in the metal-semiconductor/insulator transition temperature () towards room temperature (289 K) with the substitution of Nd by La, as the value of is varied in the sequence (0, 0.1, and 0.2), has been provided. The shift in the , from 239 K (for ) to near the room temperature 289 K (for ), is attributed to the fact that the average radius of site-A increases with the percentage of La. The maximum temperature coefficients of resistance (TCR) of ( and 0.2) are found to be higher compared to its parent compound which is almost independent of . The electrical resistivity of the experimental results is explored by various theoretical models below and above . An appropriate enlightenment for the observed behavior is discussed in detail.
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