Abstract
A number of GaAs single crystals has been grown by means of the LEC technique starting from silicon doped melts which were Ga-rich, As-rich and stoichiometric, respectively. The electrical properties were assessed in order to establish a correlation between silicon incorporation, electron mobility and melt composition. It was found that the electron mobility is higher in crystals grown from As-rich melts. The chemical incorporation of silicon is independent of the melt composition though the distribution of the dopant atoms in acceptors, donors and, possibly, complexes changes drastically with stoichiometry.
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