Abstract
Low-temperature PL decay times, τPL, measured for a series of In x Ga1−x As/GaAs quantum wells (QWs) show an almost linear increase with increasing thickness (4≤L z ≤10 nm,x=0.15) and with increasing In composition (0.05≤x≤0.25,L z =8 nm). τPL also increases linearly with temperature up to 50K, as expected for free excitons and does not exhibit the interface effects seen for GaAs/AlGaAs QWs. Wells with different In compositions exhibit a similar temperature behaviour and there is a weak influence of strain on the decay time.
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