Abstract
The influence of high-temperature postgrowth annealing (PGA) under NH3/H2, NH3/N2 ambience on the morphologies and nitridation degree of GaN/AlN QDs grown via droplet epitaxy is investigated. The results show that the size and density of GaN QDs changes with different ambiences and the NH3/N2 ambience is demonstrated as a necessary condition for maintaining optimal QD morphology by suppressing the migration and evaporation of Ga atoms and preventing the GaN decomposition. Moreover, the PGA process can effectively enhance the nitridation and crystallization of GaN QDs and the photoluminescence performance has been effectively improved after annealed under NH3/N2 ambience.
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