Abstract
We experimentally studied the influence of high temperature N2 annealing on the photoluminescence (PL) of SiC and Si quantum-dots (QDs) in SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layer fabricated by hot ion implantation technique. We demonstrated the increase of PL intensity of SiC- and Si-QDs after N2 annealing, compared with that after Ar annealing, which is probably attributable to the reduction of dangling bond density at SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /QD interface terminated by N atom trapping.
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