Influence of HFCVD Parameters on Diamond Coatings and Process Investigation of Sapphire Wafer Lapping.

PurposeLapping is a vital flattening process to improve the quality of processed semiconductor wafers such as single-crystal sapphire wafers. This study aims to optimise the lapping process of the fixed-abrasive lapping plate of sapphire wafers with good overall performance [i.e. high material removal rate (MRR), small surface roughness (Ra) of the wafers after lapping and small lapping plate wear ratio (η)].Design/methodology/approachThe influence of process parameters such as lapping time, abrasive size, abrasive concentration, lapping pressure and lapping speed on MRR, Ra and η of lapping-processed sapphire wafers was studied, and the results were combined with experimental data to establish a regression model. The multi-evaluation index optimisation problem was transformed into a single-index optimisation problem via an entropy method and the grey relational analysis (GRA) to comprehensively evaluate the performance of each parameter.FindingsThe results revealed that lapping time, abrasive size, abrasive concentration, lapping pressure and lapping speed had different influence degrees on MRR, Ra and η. Among these parameters, lapping time, lapping speed and abrasive size had the most significant effects on MRR, Ra and η, and the established regression equations predicted the response values of MRR, Ra and η to be 99.56%, 99.51% and 93.88% and the relative errors between the predicted and actual measured values were <12%, respectively. With increased lapping time, MRR, Ra and η gradually decreased. With increased abrasive size, MRR increased nearly linearly, whereas Ra and η initially decreased but subsequently increased. With an increase in abrasive concentration, MRR, Ra and η initially increased but subsequently decreased. With increased lapping pressure, MRR and η increased nearly linearly and continuously, whereas Ra decreased nearly linearly and continuously. With increased lapping speed, Ra initially decreased sharply but subsequently increased gradually, whereas η initially increased sharply but subsequently decreased gradually; however, the change in MRR was not significant. Comparing the optimised results obtained via the analysis of influence law, the parameters optimised via the entropy method and GRA were used to obtain sapphire wafers lapping with an MRR of 4.26 µm/min, Ra of 0.141 µm and η of 25.08, and the lapping effect was significantly improved.Originality/valueTherefore, GRA can provide new ideas for ultra-precision processing and process optimisation of semiconductor materials such as sapphire wafers.

Effects of microstructure of films on CVD diamond X-ray detectors

The chemical vapor deposition (CVD) diamond and diamond-like carbon (DLC) films are deposited on the cobalt cemented tungsten carbide (WC-Co) cutting tools respectively using the hot filament chemical vapor deposition (HFCVD) technique and the vacuum arc discharge with a graphite cathode. The scanning electron microscope (SEM), optical interferometer profiler and Raman spectroscopy were adopted to characterize the as-deposited diamond and DLC films. The cutting performance of as-fabricated CVD diamond and DLC coated milling tools is evaluated in dry milling SiC particulate reinforced Al-metal matrix composite material (Al/SiC-MMCs), comparing with the uncoated WC-Co milling tool. The milling results demonstrate that the uncoated WC-Co milling tool suffers severest wear in its circumferential cutting edge, while the wear of DLC coated milling tool is slightly lower. Comparatively, the CVD diamond coated milling tool exhibits much stronger wear resistance. The wear on its circumferential cutting edge is less than 0.07 mm at the end of milling test, only a half of that of DLC coated milling tool. This result is attributed to the extremely high hardness and strong adhesive strength of CVD diamond film covered on the WC-Co milling tool.

Owing to their excellent mechanical and tribological properties, like the well-known extreme hardness, low coefficient of friction and high chemical inertness, chemical vapor deposition (CVD) diamond films have found applications as a hard coating for drawing dies. The surface roughness of the diamond films is one of the most important attributes to the drawing dies. In this paper, the effects of different surface roughnesses on the friction properties of diamond films have been experimentally studied. Diamond films were fabricated using hot filament CVD. The WC-Co (Co 6[Formula: see text]wt.%) drawing dies were used as substrates. A gas mixture of acetone and hydrogen gas was used as the feedstock gas. The CVD diamond films were polished using mechanical polishing. Polished diamond films with three different surface roughnesses, as well as the unpolished diamond film, were fabricated in order to study the tribological performance between the CVD diamond films and different metals with oil lubrication. The unpolished and polished CVD diamond films are characterized with scanning electron microscope (SEM), atomic force microscope (AFM), surface profilometer, Raman spectrum and X-ray diffraction (XRD). The friction examinations were carried out by using a ball-on-plate type reciprocating friction tester. Low carbide steel, stainless steel, copper and aluminum materials were used as counterpart balls. Based on this study, the results presented the friction coefficients between the polished CVD films and different metals. The friction tests demonstrate that the smooth surface finish of CVD diamond films is beneficial for reducing their friction coefficients. The diamond films exhibit low friction coefficients when slid against the stainless steel balls and low carbide steel ball, lower than that slid against copper ball and aluminum ball, attributed to the higher ductility of copper and aluminum causing larger amount of wear debris adhering to the sliding interface and higher adhesive strength between the contacting surfaces.

Scribing wheel (SW) is an important tool for separating glass panels in thin-film transistor liquid crystal display industry. In this study, unlike the traditional SW completely made of polycrystalline diamond (PCD) or cemented tungsten carbide (c-WC), an alternative partially taking advantage of chemical vapor deposition diamond (CVDD) was newly developed. The fabrication of such unique sandwich-like CVDD-SW combined hot filament chemical vapor deposition (HFCVD), welding, and other machining processes. Both hard CVDD scribing edge and tough c-WC supporting layers contributed to SW structure. CVDD was prepared by adjusting the concentration of methane fed into HFCVD chamber. Morphological observation confirmed the reproducibility of microcrystal diamond (MCD), submicrocrystal diamond (SMCD), and nanocrystal diamond (NCD) diamond. Besides grain size, the existence of columnar structure, the nondiamond carbon content, the residual stress, and I(220)/I(111) ratio of CVDD films were characterized by scanning electron microscopy, Raman spectroscopy, and X-ray diffraction. Based on results, SMCD was predicted as the optimized CVDD for making a scribing edge. After three CVDD films were respectively integrated into SW, this prediction was supported by preliminary scribing test. Selecting Corning-1737 as the cutting object, among three CVDD-SWs and one self-made PCD-SW, only the scribing edge of SMCD-SW kept almost undamaged. The outperformance of our design was thus confirmed.

In this study, the temperature and gas velocity distributions in hot filament chemical vapor deposition (HFCVD) diamond film growth on the end surfaces of seals are simulated by the finite volume method. The influence of filament diameter, filament separation and rotational speed of the substrates is considered. Firstly, the simulation model is established by simplifying operating conditions to simulate the temperature and gas velocity distributions. Thereafter, the deposition parameters are optimized as 0.6mm filament diameter, 18mm filament separation and 5 r/min rotational speed to get the uniform temperature distribution. Under the influence of the rotational speed, the difference between temperature gradients along the directions perpendicular to the filament and parallel to the filament becomes narrow, it is consistent with the actual condition, and the maximum temperature difference on the substrates decreases to 7.4 ◦C. Furthermore, the effect of the rotational speed on the gas velocity distribution is studied. Finally, diamond films are deposited on the end surfaces of SiC seals with the optimized deposition parameters. The characterizations by scanning electron microscopy (SEM) and Raman spectroscopy exhibit a layer of homogeneous diamond films with fine-faceted crystals and uniform thickness. The results validate the simulation model.

Polycrystalline diamond (PCD) prepared by the high temperature and pressure method often uses Co as a binder, which had a detrimental effect on the cutting performance of PCD, thus Co needed to be removed. However, the removal of Co would cause residual holes and also make the cutting performance of PCD poorer. To address this issue, hot filament chemical vapor deposition (HFCVD) was used. During deposition, the residual holes cannot be filled fully, and Co would diffuse to the interface between CVD diamond coatings and the PCD substrate, which influenced the adhesive strength of the diamond coating with the PCD substrate. In order to investigate the influencing mechanism, both experiments and the density functional theory (DFT) calculations have been employed. The experimental results demonstrate that Co and the holes in the interface would reduce the interfacial binding strength. Further, we built interfacial structures consisting of diamond (100), (110), (111) surfaces and PCD to calculate the corresponding interfacial binding energy, charge density and charge density difference. After contrast, for Co and the holes located on the (110) surface, the corresponding interfacial binding energy was bigger than the others. This means that the corresponding C-C covalent bond was stronger, and the interfacial binding strength was higher. Based on this, conducting cobalt removal pretreatment, optimizing the PCD synthetic process and designing the site of Co can improve the performance of the PCD substrate CVD diamond coating tools.

Cutting performance of multilayer diamond coated silicon nitride inserts in machining aluminum–silicon alloy

Diamond coating were deposited on serrated blade by hot filament chemical vapor deposition (HFCVD) method. The lapping experiments of sapphire wafer were carried out by using diamond coated tools. The diamond coatings and machined surface of the sapphire wafer were characterized by scanning electron microscopy (SEM), laser confocal microscope and Raman spectrum. The results show that the lapped sapphire chips are small irregular chips and long thread-like debris. During the lapping process, there is graphitization of diamond crystal. A low surface roughness can be obtained using a spherical grain diamond coated tool.

Cutting performance of time-modulated chemical vapour deposited diamond coated tool inserts during machining graphite

Grinding performance of an aluminium-bonded diamond wheel on ceramics and glass: J. Sugishita, N. Kawabata, K. Kumamoto, Precision Engineering, 13(3), pp. 184–188. (Jul 1991)

Machining of an aluminum/SiC composite using diamond inserts

Optimisation of free-abrasive assisted lapping process with vitrified bonded diamond plates for sapphire substrates

Carrier free paths in Chemical Vapour Deposition (CVD) diamond films depend on the presence of traps, which therefore strongly affect the performance of those CVD diamond based devices which rely on the electronic properties of the material, like radiation detectors. For the same reason, these devices can in turn be used as tools to study carrier dynamics. It is well known that some traps may be saturated by pre-irradiation with ionizing radiation (e.g. β-particles), a process called “pumping” or “priming”. Not all traps behave in the same way. Due to the large bandgap of diamond, both shallow (not affected by pumping) and deep traps for electrons and holes may exist. We measured, using 5.5 MeV 241Am α-particles, the response of high quality CVD diamond based detectors after successive annealing steps performed at selected temperatures. The analisys of the decay of the detector efficency with annealing time at several temperatures allows a quantitative evaluation of the activation energy of these defects. Two main trapping centres connected to the pumping process were found, both related to holes, having activation energies of about 1.6 eV and 1.3 eV respectively. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Chemical vapor deposition (CVD) diamond film has long been investigated as an important coating material for a variety of mechanical components, due to its many excellent mechanical and tribological properties, e.g. extremely high hardness, low friction coefficient and excellent wear resistance. The tribological behaviors of CVD diamond films have been known to show significant dependence on both sliding environment and its surface characteristics. The investigation on the effect of sliding conditions like normal load, sliding velocity, counterpart material and lubricant have been reported extensively hi available literatures. Nevertheless, the suidies on the influence of grain size, surface roughness and homogeneity mainly concentrate on the CVD diamond film self-mated tiibosystem [1, 2]. Inadequate attention has been put on the heterogeneous contact of CVD diamond film with metal or ceramics material, which is a considerable frequently used contact type in its mechanical applications, especially for the CVD diamond coated cutting inserts or drills.