Abstract
The Ag-assisted electroless etching of p-type silicon substrate in HF/H2O2 solution at room temperature was investigated. In this work, the effects of HF, H2O2 and their volume ratio on morphology and growth of p-type silicon substrate surface by using metal assisted etching were investigated in order to produce a highly efficient antireflecting structure. The Ag metal particles were deposited onto Si wafer by electroless deposition from a metal salt solution including HF. The experimental results show that the growth rate and morphology of the pores formed on the Ag metalized Si surfaces are strongly dependent on the volume ratio of HF and H2O2.
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