Abstract
Impact of halogen content in FA0.85MA0.15Pb(I1-xBrx)3 absorbing layers of the perovskite solar cells (PSC) was investigated through numerical simulation, where the halogen content which is the Br/(Br + I) compositional ratio affects their bandgap (Eg). In this contribution, the Eg was varied from 1.48 to 1.70 eV for the different Eg grading through the variation of the Br/(Br + I) compositional ratio from 0 to 0.25, respectively. The Eg grading is defined as (Eg at front - Eg at back)/perovskite thickness. The Eg values at front and back are the Eg values of the perovskite absorber at light incident side and back side, respectively. It is demonstrated that the open-circuit voltage is significantly increased under the positive Eg grading because of the enhancement of the carrier separation. On the other hand, the short-circuit current density is enhanced under both negative and positive Eg grading owing to the improved efficient use of the broader solar spectrum. Ultimately, the highest power conversion efficiency of the PSC is demonstrated when the positive Eg grading consists of the Eg of 1.61 eV at front (Br/(Br + I) of 0.15) and the Eg of 1.48 eV at back (Br/(Br + I) of 0.00). Moreover, the effect of the carrier diffusion length is discussed.
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