Abstract
Al x Ga 1− x N/AlN( x>0.5) multiple quantum wells (MQWs) were grown on AlN/sapphire template by metalorganic vapor-phase epitaxy. The influence of growth interruption between well layer and barrier layer on the quality and luminescence property of the MQWs was investigated. High-resolution X-ray diffraction (HRXRD) measurement showed that interface between the well and barrier layers became sharper the interruption was introduced between the growth of well and barrier, moreover the luminescence intensity was enhanced and defect-related emission was weaken for the sample grown with interruption. Meanwhile, Si doping to well layer effect on the structural and optical properties was also studied. The results demonstrated that interface quality of AlGaN/AlN MQWs was a little improved and UV emission from MQWs was also enhanced by Si doping. The mechanism of enhancement was discussed in detail.
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