Abstract
Metal–insulator–metal (MIM) capacitors were grown by atomic layer deposition using tBuN = Nb(NEt2)3 and ozone as niobium and oxygen precursors, respectively. Three different deposition temperatures were used and some of the films were postdeposition annealed. The permittivity values obtained reached a value of about 50 for the films crystallized after annealing at temperatures higher than 500 °C. However, the leakage current values for the crystalline films were higher than those in the case of amorphous films.
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