Abstract
The validity of the electron effective attenuation length database developed by National Institute of Standards and Technology (NIST) is examined for x-ray photoelectron spectroscopy (XPS) measurement of HfO2 (2.7nm)∕SiON (0.8nm)∕Si. The angular dependences of photoelectron yields are calculated using the NIST database and composition depth profiles measured by high-resolution Rutherford backscattering spectroscopy. The calculated result reproduces the observed XPS result fairly well even at larger emission angles up to 80°, indicating that the accuracy of XPS depth profiling can be improved using the NIST database.
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