Abstract
The influence of irradiation dose effects on the depth distribution of implanted atoms for 120 keV gold ion implantation into silicon was investigated. A dynamic computer code DYNA based on the binary collision approximation was used to describe the implantation process. Simulation results were analyzed and compared with the pertinent experimental data and results, which were obtained in the framework of the LSS model. Conclusions related to the substantial influence of dose effects such as range shortening and ballistic mixing on the shape of the depth distribution profile are drawn.
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