Abstract
Thin films of Mn-doped ZnO with different doping concentration (0.8, 1, 3, 5 at%) were prepared on Pt/Ti/SiO 2/Si substrates by using sol–gel method. The effects of the doping concentration on the structural properties, electrical characteristics and element binding energy in films were investigated. X-ray diffraction (XRD) results showed that the c-axis orientation of ZnO films was affected by Mn 2+ content. Current–voltage ( I– V) measurements indicated that resistivities of ZnO films were observably enhanced by dopant of Mn 2+ and the resistivities value increased with a doping level up to 5 at% Mn. X-ray photoelectron spectroscopy (XPS) patterns suggested that the binding energies of O1s and ZnL 3M 45M 45 were affected by the content of Mn 2+.
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