Abstract
The present paper reports on the photovoltaic properties of zinc phthalocyanine (ZnPc) films with various dopants sandwiched between indium tin oxide (ITO) and n-type silicon substrate. The ZnPc films were realized by entrapping the molecules in a poly(methyl methacrylate) matrix upon stirring and heating the components in solution. For the ITO/p-ZnPc/n-Si sandwich structure solar cells with ZnPc doped with I 2 and without post-annealing, the measured short-circuit current density, open-circuit voltage, maximum output power, fill factor and efficiency were 28.8 mA/cm 2, 0.46 V, 5.55 mW/cm 2, 0.42 and 5.55%, respectively, under AM 1.5 illumination.
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