Abstract
Amorphous and crystalline silicon films are widely used for microelectronic and photovoltaic devices. Here, silicon thin films were fabricated by magnetron sputtering and the deposition parameters were modified to enhance crystallinity of the films. The sputtering deposition was notably assisted by a low energy argon ion beam. The substrate temperature and sputtering power, as well as the energy of the ion beam, were used as deposition parameters. Finally, the optical and electrical properties of the deposited thin films were studied and demonstrate the possibility of using several deposition parameters to enhance the films crystallinity.
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