Abstract
The effect of drain current failure occurs in GaN-based High Electron Mobility Transistors (HEMTs), due to the development of virtual gate in the drain-gate region. Thus, this work proposes a structure, which reduces the current collapse effect in the HEMT device. This work is based on a polarization model, which helps in better understanding of the virtual gate effect. The high resistance field is induced in the 2-Dimensional Electron Gas (2DEG) channel region. The model is simulated using the ATLAS device simulator. The simulation results are explained with the help of electron concentration and the drain current-voltage characteristics. As a result, the change in temperature, an abrupt change has been noticed in the drain current, which is explained using a thermal resistance model.
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