Abstract
Abstract A comparative study of several crystals of Rb2ZnCl4, obtained by different crystal growing methods, has allowed us to determine the influence of growth defects on the incommensurate phase and on the lock-in transition of these samples. X-ray diffraction has allowed us to complete previous dielectric measurements realized on the same samples and to relate the crystalline quality to the evolution of the modulation as a function of the temperature. The principal influence of an increasing defect density seems to be a stronger pinning of the modulated phase and this induces a lower lock-in temperature and a wider hysteresis.
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